Qualcomm teams up with Samsung to build Snapdragon 835

After 14nm Snapdragon 820 and 821, Qualcomm is once again collaborating with Samsung to build its next-gen SoC, the Snapdragon 835.

Qualcomm has decided to deploy the South Korean giant’s 10-nanometer FinFET process to build the next iteration of its famed Snapdragon series of System On Chip. Notably, the node shrink is expected to allow for up to 30 percent increase in area efficiency with 27 percent higher performance.

Also, the smaller footprint gives handset manufacturers the headroom to add larger batteries or opt for thinner designs.

“Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices,” said Keith Kressin, senior vice president, product management, Qualcomm Technologies. Inc.

Along with better performance and more time on the same battery capacity, the Snapdragon 835 will also pack the latest version of Qualcomm’s Quick Charge technology. This as you can obviously guess, will lead to devices being charged in less time.

Notably, Qualcomm technology looks fully aligned with Google’s recent recommendations for the USB Type-C rules.

“Quick Charge 4 comes with advanced safety features for both the adapter and mobile device. Protection is implemented at multiple levels and throughout the entire charging process to more accurately measure voltage, current, and temperature while protecting the battery, system, cables and connectors. An additional layer of protection is also being added to help prevent battery overcharging and regulate current throughout every charge cycle,” notes Qualcomm.

The Snapdragon 835 is now in production and will make its way into consumer devices in the first half of 2017.