SMIC develops 0.11micron CIS process technology

CMOS Image Sensors

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SMIC develops 0.11micron CIS process technology

SMIC has begun pilot production for customers of this technology, which can be manufactured on 200mm and 300mm wafers

Friday, October 24, 2008

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SHANGHAI, CHINA: Semiconductor Manufacturing International Corp. has successfully developed a 0.11 micron CMOS image sensor (CIS)
process technology. With this new production process, SMIC-manufactured CIS devices exhibit improved resolution, low noise, and enhanced image contrast for high performance CMOS imager applications.

SMIC offers complete CIS foundry service in China, and its CIS 0.11um capability builds on its extensive experience in the field, giving
customers a leading edge solution at competitive costs, while complementing its existing 0.18um and 0.15um CIS technologies.

The 0.11um CIS technology, available with both aluminum and copper backend metalization, for highly integrated, high density CIS solutions, is ideal for a wide range of applications, including camera phones, computer cameras, and industrial and security monitoring devices. SMIC has begun pilot production for customers to take full advantage of this proven technology, which can be manufactured on 200mm and 300mm wafers.

Paul Ouyang, SMIC vice president of marketing and sales said: "Using optimized process conditions, we've successfully reduced dark noise, enabling performance in low light environments. These features deliver to our customers a high performance product at a reasonable cost, which allows them to enhance their competitiveness and gain leading positions in an ever-growing CIS market."

©CIOL Bureau

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