Innovative Silicons Z-RAM breakthroughs

Z-RAM

Most Commented

Unified Communication for your Biz

Improve your contact center performance. See how you can make a difference.

Watch Now

Reach the ICT Community

Engage and build your ICT audience with CIOL online advertising.

Know more

Innovative Silicon's Z-RAM breakthroughs

Smallest silicon dynamic memory devices ever reported largest programming window, significantly improved retention time demonstrated

Friday, October 10, 2008

Email This

Print This

Comments

RSS

NEW PALTZ, USA: Innovative Silicon Inc. (ISi), developer of the Z-RAM zero-capacitor floating body memory technology, demonstrated that its Z-RAM memory technology continues to show considerable advantages over DRAM implementations and other proposed floating body memory designs.

Dr. Mikhail Nagoga, a principal member of ISi's technical staff, presented a paper written by Dr. Serguei Okhonin, chief scientist at ISi, that describes the smallest silicon dynamic memory devices ever reported, with the largest programming window. Separately, Dr. Ammar Nayfeh, a member of ISi's technical staff, presented a paper that discusses improvements in Z-RAM memory retention times and a reduction in leakage current.

In the paper delivered by Nagoga, titled "Ultra-scaled Z-RAM cell," Z-RAM cells based on Multiple-gate SOI MOSFETS (MUGFETs) with gate lengths down to 50nm and fin widths down to 11nm were demonstrated for the first time. Simulations proved that the basic operational principles are effective on Z-RAM cells with gate lengths down to 12.5nm and fin widths of 3nm.

Further analysis also shows that these devices exhibit the largest programming window (margin) ever recorded. Measured as the difference in current between STATE 1 and STATE 0, the programming window of these MUGFETs is close to 22µA.

Okhonin commented: "Even such small devices demonstrate a reliable memory effect, and the experimental data presented in the two papers indicates the excellent scalability of our Z-RAM memory devices. Furthermore, the results we demonstrated today are only achievable in floating body architectures. We believe our transistors are not only the smallest silicon dynamic memory devices ever published, but also the best performing. Moreover, at equivalent gate lengths, we demonstrated a several times larger programming window than previously published."

Nayfeh's paper, co-authored with ISi fellow Dr. Victor Koldyaev and titled, "A Leakage Current Model for SOI based Floating Body Memory that Includes the Poole-Frenkel Effect (PFE)," describes for the first time how the leakage current of SOI based floating body memory has been modeled and compared to experimental Z-RAM data, taking into account oxide/SOI Dit and PFE. The model has enabled the Z-RAM design team to significantly reduce the number of defects per cell, leading to an increase in retention times and a reduction in leakage current.

Jim Feldman Semico president noted, "ISi continues to demonstrate unmatched memory density and performance with its Z-RAM technology. It is also exciting to see the ongoing innovation advancing this floating body implementation."

©CIOL Bureau

Would you like to on this article?

Be first to comment on this article

Name
Email
Your reply

Is China speaking English to beat Indian IT?

Intuit Money Manager set to make India debut

Obama visit arouses mistrust among China netizens

I have never used Twitter: Obama

Satyam rejects Rs 1230-cr claims from 37 firms

TSMC dismisses reports on SMIC intervention

Bright days for high-end microprocessor cards

Sand 9 goes strong with its MEMS

Tanner EDA ties up with TowerJazz

Sale of Altis likely soon

	Simplify Business Management. ERP solutions by IBM
	Carry your Dream, Convey your Value with ZTE
	A fault tolerant server to reduce your TCO

	A must attend event for IT Professionals
	How to make your enterprise productive
	Unified Communication can impact business. Know how

	Making Web3.0 a Reality!
	CIOL Enterprise Next :What's NEXT in IT? :
	Decrease Total System Costs With Cyclone IV FPGAs

	Reach your desired Target Audience and realize high ROI
	Effective ways of Customer Acquisition through Demand Generation
	Reach 2,500 potential Enterprise Customers!